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Transistor
2SC4809
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
0.2+0.1 -0.05 0.15+0.1 -0.05
q
1 (0.5) (0.5) 1.00.1 1.60.1 5
2
(0.4)
(0.3)
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
Ratings 15 10 3 50 125 125 -55 ~ +125 Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
0 to 0.1 0.450.1
EIAJ:SC-75 SSMini3-G1 Package
Marking symbol : 1S
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Base time constant Common emitter reverse transfer capacitance hFE ratio
(Ta=25C)
Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob rbb' * CC Crb Conditions VCB = 10V, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = -5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = -5mA, f = 31.9MHz VCB = 4V, IE = 0, f = 1MHz VCE = 4V, IC = 100A VCE = 4V, IC = 5mA 0.75 1.4 1.9 1.4 11 0.45 1.6 10 3 75 400 0.5 2.7 V GHz pF PS pF min typ max 1 Unit A V V
*h
FE
Rank classification
Rank hFE Marking Symbol P 75 ~ 130 1SP Q 110 ~ 220 1SQ R 200 ~ 400 1SR
0.750.15
0.20.1
q
0.80.1 1.60.15
q
High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1
s Features
3
Publication date: June 2002
SJC00171BED
1
Transistor
PC -- Ta
150 80 Ta=25C 70 125 50
2SC4809
IC -- VCE
60 25C VCE=4V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
60 50 40 30 200A 20 100A 10
100
Collector current IC (mA)
Ta=75C 40
-25C
IB=500A 400A 300A
75
30
50
20
25
10
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C -25C Ta=75C IC/IB=10 360
hFE -- IC
4.0 VCE=4V
fT -- I E
VCB=4V Ta=25C
Forward current transfer ratio hFE
300 Ta=75C 240
Transition frequency fT (GHz)
10 30 100
3.5 3.0 2.5 2.0 1.5 1.0 0.5
180
25C
120
-25C
60
0.3
1
3
10
30
100
0 0.1
0.3
1
3
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
1.6
Collector output capacitance Cob (pF)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10
IE=0 f=1MHz Ta=25C
30
100
Collector to base voltage VCB (V)
2
SJC00171BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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